NTJD4001NT1G ,Small Signal MOSFET 30 V, 250 mA, Dual NMAXIMUM RATINGS (T = 25°C unless otherwise stated)JS 1 6 D1 1Parameter Symbol Value UnitsDrain−to−S ..
NTJD4105C ,Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-88ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Condition Mi ..
NTJD4105CT1 ,Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-883R DRAIN−TO−SOURCE RESISTANCE ()R DRAIN−TO−SOURCEDS(on), DS(on), I DRAIN CURRENT (AMPS)D,RESISTANC ..
NTJD4105CT1G ,Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-88MAXIMUM RATINGS (T = 25°C unless otherwise noted)JParameter Symbol Value UnitS 1 6 D1 1Drain−to−Sou ..
NTJD4105CT2 ,Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-882NTJD4105CTYPICAL N−CHANNEL PERFORMANCE CURVES (T = 25°C unless otherwise noted)J1.41.2V = 4.5 V to ..
NTJD4105CT2G ,Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-88• Leading −8.0 V Trench for Low R PerformanceDS(on)• ESD Protected Gate − ESD Rating: Class 1V R TY ..
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NTJD4001N-NTJD4001NT1G
Small Signal MOSFET 30 V, 250 mA, Dual N
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 100 μA 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 56 mV/ °C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I V = 0 V, V = 30 V 1.0 μADSS GS DSGate−to−Source Leakage Current I V = 0 V, V = ±10 V ±1.0 μAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 100 μA 0.8 1.2 1.5 VGS(TH) GS DS DGate Threshold Temperature V /T −3.2 mV/ °CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 4.0 V, I = 10 mA 1.0 1.5 ΩDS(on) () GS DV = 2.5 V, I = 10 mA 1.5 2.5GS DForward Transconductance g V = 3.0 V, I = 10 mA 80 mSFS DS DCHARGES AND CAPACITANCESInput Capacitance C V = 0 V, f = 1.0 MHz, 20 33 pFISS GSV V = 5.0 50V VDSOutput Capacitance C 19 32OSSReverse Transfer Capacitance C 7.25 12RSSTotal Gate Charge Q V = 5.0 V, V = 24 V, 0.9 1.3 nCGS DSG(TOT)II = 0.1 01A ADThreshold Gate Charge Q 0.2G(TH)Gate−to−Source Charge Q 0.3GSGate−to−Drain Charge Q 0.2GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time td V = 4.5 V, V = 5.0 V, 17 ns(ON) GS DDII = 10 mA, R 10 mA R = 50 50 Ω ΩD GRise Time tr 23Turn−Off Delay Time td 94(OFF)Fall Time tf 82DRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V, VT = 25°C 0.65 0.7SD GS JII = 10 mA 10 mAST = 125°C 0.45JReverse Recovery Time t V = 0 V, dI /dt = 8.0 A/μs, 12.4 nsRR GS SI = 10 mAS2. Pulse Test: pulse width ≤ 300 μs, duty cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.
