NTHS5441T1 ,Power MOSFET P-Channel ChipFET™ -3.9 A, -20 VELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHS5441T1G ,Power MOSFET P-Channel ChipFET™ -3.9 A, -20 VAND8044/DSingle-Channel 1206AChipFET Power MOSFETRecommended Pad Patternand Thermal Performance
NTHS5443 ,Power MOSFET 20V, 3.6A, P-Channel ChipFET™APPLICATION NOTEINTRODUCTION 0.0054 sq. in. or 3.51 sq. mm. This will assist the powerNew ON Semico ..
NTHS5443T1 ,Power MOSFET 20V, 3.6A, P-Channel ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHS5443T1 ,Power MOSFET 20V, 3.6A, P-Channel ChipFET™Maximum ratings are 95C/W for the 1206–8In this example, a 45C/W reduction was achieved withoutve ..
NTHS5443T1G ,Power MOSFET 20V, 3.6A, P-Channel ChipFET™APPLICATION NOTEINTRODUCTION 0.0054 sq. in. or 3.51 sq. mm. This will assist the powerNew ON Semico ..
OV7949 , high-performance security CameraChip sensor
OV7950 , ultra-compact, high-performance automotive CameraChip sensor
OV9625 , OV9625 Color CMOS SXGA (1.3 MPixel) CAMERACHIP OV9121 B&W CMOS SXGA (1.3 MPixel) CAMERACHIP
OV9655 , ultimate 1/4 inch camera-on-a-chip
OV9715 , High-Performance Video for Automotive Vision Applications
OWS4805 ,One - Industry Standard Package
NTHS5441T1
Power MOSFET P-Channel ChipFET™ -3.9 A, -20 V
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitStaticGate Threshold Voltage V V = V , I = −250 A −0.6 −1.2 VGS(th) DS GS DGate−Body Leakage I V = 0 V, V = 12 V 100 nAGSS DS GSZero Gate Voltage Drain Current I V = −16 V, V = 0 V −1.0 ADSS DS GSV = −16 V, V = 0 V, −5.0DS GST = 85°CJOn−State Drain Current (Note 3) I V −5.0 V, V = −4.5 V −20 AD(on) DS GSDrain−Source On−State Resistance (Note 3) r V = −3.6 V, I = −3.7 A − 0.050 0.06 DS(on) GS DV = −4.5 V, I = −3.9 A − 0.046 −GS DV = −2.5 V, I = −3.1 A 0.070 0.083GS DForward Transconductance (Note 3) g V = −10 V, I = −3.9 A 12 mhosfs DS DDiode Forward Voltage (Note 3) V I = −2.1 A, V = 0 V −0.8 −1.2 VSD S GSDynamic (Note 4)Total Gate Charge Q 9.7 22 nCGV = −10 V, V = −4.5 V, DS GSGate−Source Charge Q 1.2GSII = −3.9 A = −3.9 AD DGate−Drain Charge Q 3.6GDInput Capacitance C 710 pFissV = −5.0 Vdc, V = 0 Vdc, DS GSOutput Capacitance C 400ossf f = 1.0 MHz = 1.0 MHzReverse Transfer Capacitance C 140rssTurn−On Delay Time t 14 30 nsd(on)V = −10 V, R = 10 Rise Time t 22 55DD LrII −1.0 A, V 10A V = −4.5 V = 45V,D D GE GEN NTurn−Off Delay Time t 42 100R = 6 d(off)G GFall Time t 35 70fSource−Drain Reverse Recovery Time t I = −1.1 A, di/dt = 100 A/s 30 60rr F2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq [1 oz] including traces).3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Guaranteed by design, not subject to production testing.
