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NTHD5905T1ONN/a18000avaiOBSOLETE


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NTHD5905T1
OBSOLETE
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitStaticGate Threshold Voltage V V = V , I = −250 A−0.45−− VGS(th) DS GS DGate−Body Leakage I V = 0 V, V = 8.0 V−− 100 nAGSS DS GSZero Gate Voltage Drain Current I V = −6.4 V, V = 0 V−−−1.0 ADSSDS GSV = −6.4 V, V = 0 V, −−−5.0DS GST = 85°CJOn−State Drain Current (Note 3) I V  −5.0 V, V = −4.5 V−10−− AD(on) DS GSDrain−Source On−State Resistance (Note 3) rV = −4.5 V, I = −3.0 A− 0.075 0.090 DS(on) () GS DV = −2.5 V, I = −2.5 A− 0.110 0.130GS DV = −1.8 V, I = −1.0 A− 0.150 0.180GS DForward Transconductance (Note 3) g V = −5.0 V, I = −3.0 A− 7.0− Sfs DS DDiode Forward Voltage (Note 3) V I = −0.9 A, V = 0 V−−0.8−1.2 VSD S GSDynamic (Note 4)nCTotal Gate Charge Q− 5.5 9.0gV V = −40 4.0 V V, V V = −4.5 V 45 V, DS GSGate−Source Charge Q− 0.5−gsII = = −−3 3.0 A .0 AD DGate−Drain Charge Q− 1.5−gdTurn−On Delay Time t− 10 15 nsd(on)V = −4.0 V, R = 4 Rise Time t DD L− 45 70rII  −10 1.0 A, V A V = = −4.5 V 45 V,D D GE GEN NTurn−Off Delay Time t− 30 45d(off)R R = 6 6  G GFall Time t− 10 15fSource−Drain Reverse Recovery Time t I = −0.9 A, di/dt = 100 A/s− 30 60rr F2. Surface Mounted on 1″ x 1″ FR4 Board.3. Pulse Test: Pulse Width  300 s, Duty Cycle  2%.4. Guaranteed by design, not subject to production testing.
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