| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| NTHD3102CT1 |
ON|ON Semiconductor |
N/a |
3000 |
 |
|
NTHD3102CT1G , Power MOSFET Complementary, 20 V, 5.5 A /−4.2 A, ChipFET
NTHD3133PFT1G , Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET™
NTHD4102PT1 ,Power MOSFET 20 V, Dual P-Channel ChipFet™3R DRAIN−TO−SOURCE RESISTANCE ()DS(on), −I DRAIN CURRENT (AMPS)D,−I , LEAKAGE (nA)DSSR DRAIN−TO−SO ..
NTHD4102PT1G ,Power MOSFET 20 V, Dual P-Channel ChipFet™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHD4401PT1 ,Power MosFET 20 V Dual P-Channel 2.1 A ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
