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NTGS5120P
Power MOSFET, 60V PCh, TSOP6
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = −250 A−60 V(BR)DSS GS DZero Gate Voltage Drain Current I T = 25°C−1.0 ADSS V = 0 V, JGSV = −48 VDST = 125°C−5.0JV = 0 V, V = ±12 VGate−to−Source Leakage Current I 100 nADS GSGSSV = 0 V, V = ±20 V 200 nADS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = −250 A−1.0−3.0 VGS(TH) GS DS DV = −10 V, I = −2.9 ADrain−to−Source On Resistance R 72 111 mGS DDS(on)V = −4.5 V, I = −2.5 A 88 142GS DForward Transconductance g V = −5.0 V, I = −6.0 A 10.1 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 942 pFISSOutput Capacitance C V = 0 V, f = 1 MHz, V = −30 V 72OSS GS DSReverse Transfer Capacitance C 48RSSTotal Gate Charge Q 18.1 nCG(TOT)Threshold Gate Charge Q 1.2G(TH)V = −10 V, V = −30 V;GS DSI = −2.9 ADGate−to−Source Charge Q 2.7GSGate−to−Drain Charge Q 3.6GDSWITCHING CHARACTERISTICS (Note 6)Turn−On Delay Time t 8.7 nsd(ON)Rise Time t 4.9rV = −10 V, V = −30 V,GS DSI = −1.0 A, R = 6.0 D GTurn−Off Delay Time t 38d(OFF)Fall Time t 12.8fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V, T = 25°C−0.75−1.0 VSD GS JI = −0.9 ASReverse Recovery Time t 18.3 nsRRV = 0 V, d /d = 100 A/s,GS IS tCharge Time t 15.5 nsaI = −0.9 ASReverse Recovery Charge Q 15.1 nCRR5. Pulse Test: pulse width 300 s, duty cycle 2%6. Switching characteristics are independent of operating junction temperatures
