NTGS3455T1G ,MOSFET -3.5 Amps, -30 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value UnitDrain−to−Source Voltage ..
NTGS4111P ,Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTGS4111PT1G , Power MOSFET (-30 V, -4.7 A, Single P-Channel, TSOP-6)
NTGS4141N ,Power MOSFET 30 V, 7.0 A, Single N-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTGS5120P ,Power MOSFET, 60V PCh, TSOP6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTGS5120PT1G , Power MOSFET −60 V, −2.9 A, Single P−Channel, TSOP−6
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
OV2655 , high sensitivity 1/5-inch 2 megapixel CameraChip sensor
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
OV7411 , SINGLE-CHIP CMOS COLOR PAL CAMERA
NTGS3455-NTGS3455T1-NTGS3455T1G
MOSFET -3.5 Amps, -30 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 3. & 4.)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = −10 μA) −30 − −GS DZero Gate Voltage Drain Current I μAdcDSS(V = 0 Vdc, V = −30 Vdc, T = 25°C) − − −1.0GS DS J(V = 0 Vdc, V = −30 Vdc, T = 70°C) − − −5.0GS DS JGate−Body Leakage Current I nAdcGSS(V = −20.0 Vdc, V = 0 Vdc) − − −100GS DSGate−Body Leakage Current I nAdcGSS(V = +20.0 Vdc, V = 0 Vdc) − − 100GS DSON CHARACTERISTICSGate Threshold Voltage V VdcGS(th)(V = V , I = −250 μAdc) −1.0 −1.87 −3.0DS GS DStatic Drain−Source On−State Resistance R DS(on)(V = −10 Vdc, I = −3.5 Adc) − 0.094 0.100GS D(V = −4.5 Vdc, I = −2.7 Adc) − 0.144 0.170GS DForward Transconductance g mhosFS(V = −15 Vdc, I = −3.5 Adc) − 6.0 −DS DDYNAMIC CHARACTERISTICSTotal Gate Charge Q − 9.0 13 nCtot(V (V = −15 Vdc, V 15 Vd V = −10 Vdc, 10 VdDS GSGate−Source Charge Q − 2.5 −gsII = −3.5 Adc = −3.5 Adc) )D DGate−Drain Charge Q − 2.0 −gdInput Capacitance C − 480 − pFiss(V (V = −5.0 Vdc, V 50Vd V = 0 Vdc, 0VdDS GSOutput Capacitance C − 220 −ossf f = 1.0 MHz = 1.0 MHz) )Reverse Transfer Capacitance C − 60 −rssSWITCHING CHARACTERISTICSnsTurn−On Delay Time t − 10 20d(on)Rise Time t − 15 30r(V (V = −20 Vdc, I 20 Vdc, I = −1.0 Adc, 1.0 Adc,DD DD D DV = −10 Vdc, R = 6.0 )GS gTurn−Off Delay Time t − 20 35d(off)Fall Time t − 10 20fReverse Recovery Time (I = −1.7 Adc, dl /dt = 100 A/μs) t − 30 − nsS S rrBODY−DRAIN DIODE RATINGSDiode Forward On−Voltage (I = −1.7 Adc, V = 0 Vdc) V − −0.90 −1.2 VdcS GS SDDiode Forward On−Voltage (I = −3.5 Adc, V = 0 Vdc) V − −1.0 − VdcS GS SD3. Indicates Pulse Test: P.W. = 300 μsec max, Duty Cycle = 2%.4. Class 1 ESD rated − Handling precautions to protect against electrostatic discharge is mandatory.
