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NTGS3446ONN/a10000avaiPower MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6
NTGS3446T1ONN/a6967avaiPower MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6
NTGS3446T1GONN/a30000avaiPower MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6


NTGS3446T1G ,Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6• Higher Efficiency Extending Battery Life• Logic Level Gate DriveV R TYP I MAX• Diode Exhibits Hig ..
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NTGS3446-NTGS3446T1-NTGS3446T1G
Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V Vdc(BR)DSS(V = 0 Vdc, I = 0.25 mAdc) 20 − −GS D− 22 − mV/°CTemperature Coefficient (Positive)Zero Gate Voltage Collector Current I AdcDSS(V = 20 Vdc, V = 0 Vdc) − − 1.0DS GS(V = 20 Vdc, V = 0 Vdc, T = 85°C) − − 25DS GS JGate−Body Leakage Current (V = ±12 Vdc, V = 0) I − − 100 nAdcGS DS GSS(f)I − − −100GSS(r)ON CHARACTERISTICS (Note 4)Gate Threshold Voltage V VdcGS(th)I = 0.25 mA, V = V 0.6 0.85 1.2D DS GSTemperature Coefficient (Negative) − −2.5 − mV/°CStatic Drain−to−Source On−Resistance R mDS(on)(V = 4.5 Vdc, I = 5.1 Adc) − 36 45GS D(V = 2.5 Vdc, I = 4.4 Adc) − 44 55GS DForward Transconductance (V = 10 Vdc, I = 5.1 Adc) g − 12 − mhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 510 750 pFiss(V = 10 Vdc, V = 0 Vdc,DS GSOutput Capacitance C − 200 350ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C − 60 100rssSWITCHING CHARACTERISTICS (Note 5)Turn−On Delay Time t − 9.0 16 nsd(on)Rise Time t − 12 20r(V (V = = 10 Vdc, I 10 Vdc, I = 1.0 Adc, = 1.0 Adc,DD DD D DV = 4.5 Vdc, R = 6.0 )GS GTurn−Off Delay Time t − 35 60d(off)Fall Time t − 20 35fGate Charge Q − 8.0 15 nCT(V = 10 Vdc, I = 5.1 Adc,DS DQ − 2.0 −gsV V = 4.5 Vdc = 4.5 Vdc) )GS GSQ − 2.0 −gdSOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (Note 4) V VdcSD(I = 1.7 Adc, V = 0 Vdc)− 0.74 1.1S GS(I = 1.7 Adc, V = 0 Vdc, T = 85°C) − 0.66 −S GS JReverse Recovery Time t − 20 − nsrrt − 11 −a(I (I = 1.7 Adc, V =17Adc V = 0 Vdc, = 0 VdcS GSt − 9.0 −di di /dt /dt = 100 A/ 100 A/s) s) bS SReverse Recovery Stored Q − 0.01 − CRRCharge4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.5. Switching characteristics are independent of operating junction temperature.
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