NTF2955T1 ,Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-2233−I DRAIN CURRENT (AMPS)R DRAIN−TO−SOURCE RESISTANCE (Ω)R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) D ..
NTF2955T1G ,Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223MAXIMUM RATINGS (T = 25°C unless otherwise noted)JParameter Symbol Value UnitDrain−to−Source Voltag ..
NTF3055-100 ,Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223NTF3055-100Preferred DevicePower MOSFET3.0 Amps, 60 VoltsN−Channel SOT−223Designed for low voltage, ..
NTF3055-100T1 ,Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223MAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitMARKINGDIAGRAM4Drain−to−S ..
NTF3055-100T3 ,Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTF3055-100T3G ,Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-2233I DRAIN CURRENT (AMPS)R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R DRAIN−TO−SOURCE RESISTANCE ()DS ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
OV2655 , high sensitivity 1/5-inch 2 megapixel CameraChip sensor
OV6680 , optimal low-light sensitivity and pixel performance for video conferencing cameras in 3G mobile phones
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NTF2955-NTF2955T1-NTF2955T1G
Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = −250 A −60 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 66.4 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I V = 0 V, T = 25°C −1.0 ADSS GS JV V = −60 60 V VDST = 125°C −50JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = −1.0 mA −2.0 −4.0 VGS(TH) GS DS DDrain−to−Source On Resistance R V = −10 V, I = −0.75 A 145 170DS(on) () mΩGS DV = −10 V, I = −1.5 A 150 180GS DV = −10 V, I = −2.4 A 154 185GS DForward Transconductance g V = −15 V, I = −0.75 A 1.77 SFS GS DCHARGES AND CAPACITANCESV = 0 V, f = 1.0 MHz, pFInput Capacitance C 492ISS GSV V = 25 25 V VDSOutput Capacitance C 165OSSReverse Transfer Capacitance C 50RSSTotal Gate Charge Q V = 10 V, V = 30 V, 14.3 nCG(TOT) GS DSII = 1.5 15A ADThreshold Gate Charge Q 1.2G(TH)Gate−to−Source Charge Q 2.3GSGate−to−Drain Charge Q 5.2GDSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t V = 10 V, V = 25 V, 11 nsd(ON) GS DDII = 1.5 15A A, R R = 9.1 91 Ω ΩD GRise Time t 7.6rR R = 25 25 Ω ΩL LTurn−Off Delay Time t 65d(OFF)Fall Time t 38fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V, T = 25°C −1.10 −1.30 VSD GS JII = 1.5 15A AST = 125°C −0.9JReverse Recovery Time t 36RRCharge Time t 20nsaV V = = 0 V 0 V, , dI dI /dt = 100 A/ /dt = 100 A/s, s, GS GS S SI = 1.5 ASDischarge Time t 16bReverse Recovery Charge Q 0.139 nCRR3. Pulse Test: pulse width ≤ 300s, duty cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
