NTD95N02R ,Power MOSFET 24V, 95 A, N-Channel Single DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
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NTD95N02R
Power MOSFET 24V, 95 A, N-Channel Single DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 24 29 V(BR)DSSGS DDrain−to−Source Breakdown Voltage V /T 15 mV/°C(BR)DSSTemperature Coefficient JZero Gate Voltage Drain Current I AT = 25°C 1.5DSS JV = 0 V, V = 20 VGS DST = 125°C 10JGate−to−Source Leakage I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.0 2.0 VGS(TH) GS DS DNegative Threshold Temperature V /T 5.0 mV/°CGS(TH) JCoefficientDrain−to−Source On−Resistance R mV = 4.5 V, I = 10 A 5.9 8.0DS(on) GS DV = 10 V, I = 20 A 4.5 5.0GS DForward Transconductance gFS V = 10 V, I = 10 A 30 SGS DCHARGES, CAPACITANCES AND GATE RESISTANCEpFInput Capacitance C 2400ISSOutput Capacitance C 1020V = 0 V, f = 1.0 MHz, V = 20 VOSS GS DSReverse Transfer Capacitance C 390RSSTotal Gate Charge nCQ 21TQ 4.4V = 4.5 V, V = 10 V; I = 10 AGS GS DS DQ 9.1GDSWITCHING CHARACTERISTICSTurn−on Delay Time t 10 nsd(on)Rise Time t 82rV = 10 V, V = 10 V,GS DDI = 30 A, R = 3 Turn−off Time t D G 26d(off)Fall Time t 70fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V, I = 20 A T = 25°C 0.83 1.2 VSD GS S JReverse Recovery Time t 45 nsRRCharge Time T 20aV = 0 V, d /dt = 100 A/s,GS ISDI = 20 ASDischarge Time T 30bReverse Recovery Charge Q 50 nCRR5. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
