NTD60N02RT4 ,Power MOSFET 24V N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTD60N02RT4 ,Power MOSFET 24V N-Channel DPAKFeatures• Planar HD3e Process for Fast Switching Performance• Low R to Minimize Conduction LossDS(o ..
NTD60N02RT4G ,Power MOSFET 24V N-Channel DPAK3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (A)DS(on) DS(o ..
NTD60N03 ,Power MOSFET 60 Amps, 28 Volts N-Channel DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTD6414AN ,N-Channel Power MOSFET 100 V, 32 A, 37 mOHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD6414AN-1G , N-Channel Power MOSFET 100 V, 32 A, 37 mΩ
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
OUDH-SS-112D , 10 Amp Miniature, Sealed PC Board Relay
OV2640 , world smallest 2 megapixel CameraChip
NTD60N02R-NTD60N02R-1G-NTD60N02RG-NTD60N02RT4-NTD60N02RT4G
Power MOSFET 24V N-Channel DPAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V Vdc(BR)DSS25 27.5 −(V = 0 Vdc, I = 250 Adc)GS D− 25.5 − mV/°CTemperature Coefficient (Positive)Zero Gate Voltage Drain Current I AdcDSS− − 1.5(V = 20 Vdc, V = 0 Vdc)DS GS− − 10(V = 20 Vdc, V = 0 Vdc, T = 150°C)DS GS JGate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VdcGS(th)1.0 1.5 2.0(V = V , I = 250 Adc)DS GS D− 4.1 − mV/°CThreshold Temperature Coefficient (Negative)Static Drain−to−Source On−Resistance (Note 3) R mDS(on)− 11.2 12.5(V = 4.5 Vdc, I = 15 Adc)GS D− 8.4 10.5(V = 10 Vdc, I = 20 Adc)GS D− 8.2 −(V = 10 Vdc, I = 31 Adc)GS DForward Transconductance (V = 10 Vdc, I = 15 Adc) (Note 3) g − 27 − MhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 1000 1330 pFiss(V = 20 Vdc, V = 0 Vdc,DS GSOutput Capacitance C − 480 640ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C − 180 225rssSWITCHING CHARACTERISTICS (Note 4)nsTurn−On Delay Time t − 7.0 −d(on)Rise Time t − 33 −r(V (V = 10 Vdc, V = 10 Vdc, V = 10 Vdc, = 10 Vdc, GS GS DD DDI = 31 Adc, R = 3.0 )D GTurn−Off Delay Time t − 19 −d(off)Fall Time t − 9.0 −fGate Charge Q − 9.5 14 nCT(V = 4.5 Vdc, I = 31 Adc,GS DQ − 2.2 −GSV V = 10 Vdc = 10 Vdc) ) ( (Note Note 3 3) )DS DSQ − 5.0 −GDSOURCE−DRAIN DIODE CHARACTERISTICSForward On−V Forward On−Voltage oltage V V − − 0.88 0.88 1.2 1.2 Vdc Vdc( (II = 20 Adc = 20 Adc, , V V = 0 Vdc = 0 Vdc) ) ( (Note Note 3 3) )S SD DS S GS GS− 1.15 −(I (I = 31 Adc, V 31 Adc, V = 0 Vdc) 0 Vdc)S S GS GS− 0.80 080 −(I (I = 15 Adc, V 15 Ad V = 0 Vdc, T 0Vd T = 125 125°C) C)S GS JReverse Recovery Time t − 29.1 − nsrr(I = 31 Adc, V = 0 Vdc,S GSt − 13.6 −adI dI /dt = 100 A/ /dt = 100 A/s s) ) (Note (Note 3 3) )S St − 15.5 −bReverse Recovery Stored Charge Q − 0.02 − Crr3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
