NTD4969N ,Power MOSFET, 30 V, 41 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
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NTD4969NT4G , Power MOSFET 30 V, 41 A, Single N−Channel, DPAK/IPAK CPU Power Delivery
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OSC1758-400B ,Hybrid Power OscillatorGENERAL DESCRIPTION
The 050758 is a hybrid sine/cosine power oscillator which can
provide 1 maxim ..
NTD4969N
Power MOSFET, 30 V, 41 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V / 17(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25°C 1.0DSS GS JV = 24 V ADST = 125°C 10JGateï toï Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 5)Gate Threshold Voltage V V = V , I = 250 A 1.5 1.8 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 4.5GS(TH) JmV/°CCoefficientDrainï toï Source On Resistance R V = 10 V I = 30 A 6.9 9.0DS(on) GS DI = 15 A 6.9DmV = 4.5 V I = 30 A 13.6 19GS DI = 15 A 13.2DForward Transconductance g V = 1.5 V, I = 30 A 36 SFS DS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 837ISSOutput Capacitance C V = 0 V, f = 1.0 MHz, V = 15 V 347 pFOSSGS DSReverse Transfer Capacitance C 180RSSTotal Gate Charge Q 9.0G(TOT)Threshold Gate Charge Q 1.42G(TH)V = 4.5 V, V = 15 V, I = 30 A nCGS DS DGateï toï Source Charge Q 2.8GSGateï toï Drain Charge Q 4.8GDTotal Gate Charge Q V = 10 V, V = 15 V, I = 30 A 16.5 nCG(TOT) GS DS DSWITCHING CHARACTERISTICS (Note 6)Turnï On Delay Time t 10d(ON)Rise Time t 27rV = 4.5 V, V = 15 V,GS DSnsI = 15 A, R = 3.0 D GTurnï Off Delay Time t 13.3d(OFF)Fall Time t 6.4f5. Pulse Test: pulse width 300 s, duty cycle 2%.6. Switching characteristics are independent of operating junction temperatures.7. Assume terminal length of 110 mils.
