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NTD4858NONN/a10000avaiPower MOSFET, 25 V, 73 A, Single N-Channel


NTD4858N ,Power MOSFET, 25 V, 73 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
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NTD4858N
Power MOSFET, 25 V, 73 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 25 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V / 22(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V,T = 25°C 1.0DSS GS JV = 20 V ADST = 125°C 10JGateï toï Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.45 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 5.3GS(TH) JmV/°CCoefficientDrainï toï Source On Resistance R V = 10 V I = 30 A 5.2 6.2DS(on) GS DmV = 4.5 V I = 30 A 7.3 9.3GS DForward Transconductance g V = 1.5 V, I = 15 A 55 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 1563ISSOutput Capacitance C 405V = 0 V, f = 1.0 MHz, V = 12 V pFOSSGS DSReverse Transfer Capacitance C 200RSSTotal Gate Charge Q 12.8 19.2G(TOT)Threshold Gate Charge Q 1.3G(TH)V = 4.5 V, V = 15 V, I = 30 A nCGS DS DGateï toï Source Charge Q 4.7GSGateï toï Drain Charge Q 5.2GDTotal Gate Charge Q V = 10 V, V = 15 V, I = 30 A 25.7 nCG(TOT) GS DS DSWITCHING CHARACTERISTICS (Note 4)Turnï On Delay Time t 12.6d(ON)Rise Time t 20.2rV = 4.5 V, V = 15 V,GS DSnsI = 15 A, R = 3.0 D GTurnï Off Delay Time t 16.4d(OFF)Fall Time t 5.1fTurnï On Delay Time t 7.7d(ON)Rise Time t 17.3rV = 11.5 V, V = 15 V,GS DSnsI = 15 A, R = 3.0 D GTurnï Off Delay Time t 23.8d(OFF)Fall Time t 2.8f3. Pulse Test: pulse width  300 s, duty cycle  2%.4. Switching characteristics are independent of operating junction temperatures.
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