NTD4808N ,Power MOSFET, 30 V, 63 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTD4808N-1G , Power MOSFET 30 V, 63 A, Single N--Channel, DPAK/IPAK
NTD4809N ,Power MOSFET, 30 V, 58 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4809N-1G , Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK
NTD4809N-35G , Power MOSFET 30 V, 58 A, Single N--Channel, DPAK/IPAK
NTD4809NH ,Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
OR8GU41 ,DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS)APPLICATIONS Unit in mm(FAST RECOVERY)Average Forward Current: IF (AV) = 0.8A (Ta = 40°C){.65i1Repe ..
ORT42G5-1BMN484C , 0.6 to 3.7 Gbps XAUI and FC FPSCs
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
NTD4808N
Power MOSFET, 30 V, 63 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V / 27(BR)DSSmV/°CTemperature Coefficient TJZero Gate Voltage Drain Current I V = 0 V, T = 25 °C 1DSS GS JV = 24 V ADST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = ±20 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 5.6GS(TH) JmV/°CCoefficientDrain−to−Source On Resistance R V = 10 to 11.5 V I = 30 A 6.7 8.0DS(on) GSDI = 15 A 6.6mDV = 4.5 VI = 30 A 10.3 12.4GS DI = 15 A 9.8DForward Transconductance g V = 15 V, I = 15 A 11.4 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 1538ISSOutput Capacitance C 334V = 0 V, f = 1 MHz, V = 12 V pFOSSGS DSReverse Transfer Capacitance C 180RSSTotal Gate Charge Q 11.3 13G(TOT)Threshold Gate Charge Q 1.6G(TH)V = 4.5 V, V = 15 V; I = 30 A nCGS DS DGate−to−Source Charge Q 4.9GSGate−to−Drain Charge Q 4.9GDTotal Gate Charge Q V = 11.5 V, V = 15 V; 26 nCG(TOT) GS DSI = 30 ADSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 12.3d(ON)Rise Time t 21.3rV = 4.5 V, V = 15 V, I = 15 A,GS DS DnsR = 3.0 GTurn−Off Delay Time t 14.6d(OFF)Fall Time t 6.0f3. Pulse Test: pulse width 300 s, duty cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
