NTD4804N ,Power MOSFET, 30 V, 117 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4805N ,Power MOSFET, 30 V, 88 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4805N-1G , Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK
NTD4806N ,Power MOSFET, 30 V, 76 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NTD4806N-35G , Power MOSFET 30 V, 76 A, Single N--Channel, DPAK/IPAK
NTD4808N ,Power MOSFET, 30 V, 63 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
OR8GU41 ,DIFFUSED TYPE (HIGH SPEED RECTIFIER APPLICATIONS)APPLICATIONS Unit in mm(FAST RECOVERY)Average Forward Current: IF (AV) = 0.8A (Ta = 40°C){.65i1Repe ..
ORT42G5-1BMN484C , 0.6 to 3.7 Gbps XAUI and FC FPSCs
ORT8850L-1BMN680C , Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver
OSA-SH-224DM3 , 2 Pole Miniature Power PC Board Relay
OSA-SS-205DM5 , 2 Pole Miniature Power PC Board Relay
OSA-SS-224DM5 , 2 Pole Miniature Power PC Board Relay
NTD4804N
Power MOSFET, 30 V, 117 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 30 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 26 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 V,GSV = 24 VDST = 125°C 10JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = 250 A 1.5 2.5 VGS(TH) GS DS DNegative Threshold Temperature V /T 7.6 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance R V = 10 to 11.5 V I = 30 A 3.4 4.0 mDS(on) GSDI = 15 A 3.4DV = 4.5 V I = 30 A 4.7 5.5GS DI = 15 A 4.6DForward Transconductance gFS V = 15 V, I = 15 A 23 SDS DCHARGES AND CAPACITANCESInput Capacitance C 4490 pFissV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 952ossV = 12 VDSReverse Transfer Capacitance C 556rssTotal Gate Charge Q 30 40 nCG(TOT)Threshold Gate Charge Q 5.5G(TH)V = 4.5 V, V = 15 V,GS DSI = 30 ADGate−to−Source Charge Q 13GSGate−to−Drain Charge Q 13GDTotal Gate Charge Q V = 11.5 V, V = 15 V, 73 nCG(TOT) GS DSI = 30 ADSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 18 nsd(on)Rise Time t 20rV = 4.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 D GTurn−Off Delay Time t 24d(off)Fall Time t 8fTurn−On Delay Time t 10 nsd(on)Rise Time t 19rV = 11.5 V, V = 15 V,GS DSI = 15 A, R = 3.0 D GTurn−Off Delay Time t 35d(off)Fall Time t 5f3. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.4. Switching characteristics are independent of operating junction temperatures.
