NTD20N03L27T4G ,Power MOSFET 20 Amps, 30 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)C4DPAKRating Symbol Value UnitCASE 369CDrain−to−So ..
NTD20N06 ,Power MOSFET 20 Amps, 60 Volts2NTD20N0640 40V = 10 V 7 VGS6.5 VV ≥ 10 VDS9 V32 328 V6 V24245.5 V16 165 VT = 25°CJ8 84.5 VT = 100° ..
NTD20N06G ,Power MOSFET 20 Amps, 60 Volts3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AMPS)DS(on)DS ..
NTD20N06L ,Power MOSFET 20 Amps, 60 Volts, Logic Level N-Channel DPAK3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (Ω) I , DRAIN CURRENT (AMPS)DS(on)DS ..
NTD20N06LT4G , Power MOSFET 20 Amps, 60 Volts Logic Level, N−Channel DPAK
NTD20N06T4 ,Power MOSFET 20 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
OR2T04A-4T100 , Field-Programmable Gate Arrays
OR2T04A-4T144 , Field-Programmable Gate Arrays
OR2T04A-4T144 , Field-Programmable Gate Arrays
OR2T08A-4BA256 , Field-Programmable Gate Arrays
OR2T10A-2S208 , Field-Programmable Gate Arrays
OR2T15A-6S208 , Field-Programmable Gate Arrays
NTD20N03L27-NTD20N03L27G-NTD20N03L27T4-NTD20N03L27T4G
Power MOSFET 20 Amps, 30 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 2) V Vdc(BR)DSS(V = 0 Vdc, I = 250 Adc) 30 − −GS DTemperature Coefficient (Positive) − 43 − mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 30 Vdc, V = 0 Vdc) − − 10DS GS(V = 30 Vdc, V = 0 Vdc, T =150°C) − − 100DS GS JGate−Body Leakage Current (V = ±20 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 2)Gate Threshold Voltage (Note 2) V VdcGS(th)(V = V , I = 250 Adc) 1.0 1.6 2.0DS GS DThreshold Temperature Coefficient (Negative) − 5.0 − mV/°CStatic Drain−to−Source On−Resistance (Note 2) R mDS(on)(V = 4.0 Vdc, I = 10 Adc) − 28 31GS D(V = 5.0 Vdc, I = 10 Adc) − 23 27GS DStatic Drain−to−Source On−Voltage (Note 2) V VdcDS(on)(V = 5.0 Vdc, I = 20 Adc) − 0.48 0.54GS D(V = 5.0 Vdc, I = 10 Adc, T = 150°C) − 0.40 −GS D JForward Transconductance (Note 2) (V = 5.0 Vdc, I = 10 Adc) g − 21 − mhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 1005 1260 pFiss(V (V = 25 Vdc, V 25 Vdc V = 0 Vdc, 0 VdcDS GSOutput CapacitanceC − 271 420ossf=10 f = 1.0 MHz) MHz)Transfer Capacitance C − 87 112rssSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t − 17 25 nsd(on)(V (V = 20 Vdc, I 20 Vd I = 20 Adc, 20 AdDD DRise Time t − 137 160rV V = 5.0 Vdc, =50VdcGS GSTurn−Off Delay Time t − 38 45d(off)R R = 9.1 = 9.1 ) ) ( (Note Note 2 2) )G GFall Time t − 31 40fG Gate Charge aeC a ge Q − 13.8 18.9 nCT(V (V = 48 Vdc, I 48 Vdc I = 15 Adc, 15 AdcDS DQ − 2.8 −1V V = = 10 10 Vdc) Vdc) (N (Note ote 2) 2)GS GSQ − 6.6 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage V VdcSD(I = 20 Adc, V = 0 Vdc) (Note 2) − 1.0 1.15S GS(I = 20 Adc, V = 0 Vdc, T = 125°C)− 0.9 −S GS Jt − 23 −Reverse Recovery T e e se eco e y ime e ns srrt − 13 −(I (I =15 Adc, V 15 Adc, V = 0 Vdc, 0 Vdc,aS S GS GSdl /dt = 100 A/s) (Note 2)t − 10 −S SbReverse Recovery Stored Charge Q − 0.017 − CRR2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperature.ORDERING INFORMATION†Device Package ShippingNTD20N03L27 DPAK 75 Units/RailNTD20N03L27G DPAK 75 Units/Rail(Pb−Free)NTD20N03L27−1 DPAK−3 75 Units/RailNTD20N03L27−1G DPAK 75 Units/Rail(Pb−Free)NTD20N03L27T4 DPAK 2500 Tape & ReelNTD20N03L27T4G DPAK 2500 Tape & Reel(Pb−Free)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.
