NTP30N06L ,Power MOSFET 30 Amps, 60 Volts, Logic Level2NTP30N06L, NTB30N06L60 60V = 10 V V ≥ 10 VGS DS5.5 V5 V50 508 V6 V4.5 V40 4030 304 V20 203.5 VT = ..
NTP45N06 ,Power MOSFET 45 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTP52N10G ,N-Channel Enhancement Mode TO-2203R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (Ω)I , DRAIN CURRENT (AMPS)DS(on) DS ..
NTP5404N , Power MOSFET 40 V, 136 A, Single N−Channel, D2PAK & TO−220
NTP5404NRG , Power MOSFET 40 V, 136 A, Single N−Channel, D2PAK & TO−220
NTP5860N , N-Channel Power MOSFET
OZ962R , High-Efficiency Inverter Controller
OZ964G , Change Summary
OZ964G , Change Summary
OZ965IR , High-Efficiency Inverter Controller
OZ965IR , High-Efficiency Inverter Controller
OZ990S , Intelligent Manager Smart PMU/GPIO
NTB30N06LG-NTB30N06LT4-NTP30N06L
Power MOSFET 30 Amps, 60 Volts, Logic Level
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 1) V Vdc(BR)DSS(V = 0 Vdc, I = 250 Adc) 60 71.8 −GS DTemperature Coefficient (Positive) − 69 − mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 60 Vdc, V = 0 Vdc) − − 1.0DS GS(V = 60 Vdc, V = 0 Vdc, T = 150°C) − − 10DS GS JGate−Body Leakage Current (V = ±15 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 1)Gate Threshold Voltage (Note 1) V VdcGS(th)(V = V , I = 250 Adc) 1.0 1.7 2.0DS GS DThreshold Temperature Coefficient (Negative) − 4.8 − mV/°CStatic Drain−to−Source On−Resistance (Note 1) R mDS(on)(V = 5.0 Vdc, I = 15 Adc) − 38 46GS DStatic Drain−to−Source On−Voltage (Note 1) V VdcDS(on)(V = 5.0 Vdc, I = 30 Adc) − 1.3 1.7GS D(V = 5.0 Vdc, I = 15 Adc, T = 150°C) − 1.06 −GS D JForward Transconductance (Note 1) (V = 7.0 Vdc, I = 15 Adc) g − 21 − mhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 810 1150 pFiss(V (V = 25 Vdc, V 25 Vd V = 0 Vdc, 0VdDS GSOutput Capacitance C − 260 370ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C − 80 115rssSWITCHING CHARACTERISTICS (Note 2)Turn−On Delay Time t − 10 20 nsd(on)Rise Time t − 200 400r(V (V = 30 Vdc, I 30 Vdc, I = 30 Adc, 30 Adc,DD DD D DV = 5.0 Vdc, R = 9.1 ) (Note 1)GS GTurn−Off Delay Time t − 15.6 30d(off)Fall Time t − 62 120fGate Charge Q − 16 32 nCT(V (V = 48 Vdc, I 48 Vd I = 30 Adc, 30 AdDS DQ − 3.9 −1V V = 5.0 Vdc = 5.0 Vdc) ) ( (Note Note 1 1) )GS GSQ − 10 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (I = 30 Adc, V = 0 Vdc) (Note 1) V − 1.01 1.2 VdcS GS SD(I = 30 Adc, V = 0 Vdc, T = 150°C) − 1.03 −S GS JReverse Recovery Time t − 50 − nsrr(I (I = 30 Adc, V 30 Ad V = 0 Vdc, 0VdS GSt − 32 −adI dI /dt = 100 A/ /dt = 100 A/s s) ) ( (Note Note 1 1) )S St − 17 −bReverse Recovery Stored Charge Q − 0.082 − CRR1. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.2. Switching characteristics are independent of operating junction temperatures.
