NSB4904DW1T1G ,Dual Bias Resistor TransistorTHERMAL CHARACTERISTICSCharacteristic(One Junction Heated) Symbol Max UnitTotal Device Dissipation ..
NSB4904DW1T1G ,Dual Bias Resistor TransistorELECTRICAL CHARACTERISTICS(T = 25°C unless otherwise noted, common for Q and Q , − minus sign for Q ..
NSB8JT ,Glass Passivated General Purpose Plastic Rectifier Forward Current 8.0ANSxT, NSFxT, NSBxTVishay Semiconductorsformerly General SemiconductorGlass Passivated General Purpo ..
NSB9435T1 ,High Current Bias Resistor TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Typ Max Uni ..
NSBA114EDXV6T1 , Dual Bias Resistor Transistors
NSBC113EDXV6T1 , Dual Bias Resistor Transistors
OPA2333AID ,1.8V, 17?A, 2 channels, microPower, Precision, Zero Drift CMOS Op Amp 8-SOIC -40 to 125Maximum Ratings.. 510.2 Layout Example....... 236.2 ESD Ratings........ 511 Device and Documentatio ..
OPA2333AIDG4 ,1.8V, 17?A, 2 channels, microPower, Precision, Zero Drift CMOS Op Amp 8-SOIC -40 to 125 SBOS351E–MARCH 2006–REVISED DECEMBER 20155 Pin Configuration and FunctionsOPA333 DBV PackageOPA333 ..
OPA2333AIDGKR ,1.8V, 17?A, 2 channels, microPower, Precision, Zero Drift CMOS Op Amp 8-VSSOP -40 to 125Electrical Characteristics....... 711.4 Community Resources...... 246.7 Typical Characteristics. 81 ..
OPA2333AIDGKRG4 ,1.8V, 17?A, 2 channels, microPower, Precision, Zero Drift CMOS Op Amp 8-VSSOP -40 to 125Block Diagram... 1212 Mechanical, Packaging, and Orderable7.3 Feature Description.... 12Information ..
OPA2333AIDR ,1.8V, 17?A, 2 channels, microPower, Precision, Zero Drift CMOS Op Amp 8-SOIC -40 to 125 SBOS351E–MARCH 2006–REVISED DECEMBER 20155 Pin Configuration and FunctionsOPA333 DBV PackageOPA333 ..
OPA2333AIDR ,1.8V, 17?A, 2 channels, microPower, Precision, Zero Drift CMOS Op Amp 8-SOIC -40 to 125Block Diagram... 1212 Mechanical, Packaging, and Orderable7.3 Feature Description.... 12Information ..
NSB4904DW1T1G
Dual Bias Resistor Transistor
ELECTRICAL CHARACTERISTICS(T = 25°C unless otherwise noted, common for Q and Q , − minus sign for Q (PNP) omitted)A 1 2 1Characteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSCollector-Base Cutoff Current (V = 50 V, I = 0) I−− 100 nACB E CBOCollector-Emitter Cutoff Current (V = 50 V, I = 0) I−− 500 nACE B CEOEmitter-Base Cutoff Current (V = 6.0 V, I = 0) I−− 0.1 mAEB C EBOCollector-Base Breakdown Voltage (I = 10 A, I = 0) V 50−− V(BR)CBOC ECollector-Emitter Breakdown Voltage (Note 4) (I = 2.0 mA, I = 0) V 50−− VC B (BR)CEOON CHARACTERISTICS (Note 4)DC Current Gain (V = 10 V, I = 5.0 mA) h 80 140−CE C FECollector-Emitter Saturation Voltage (I = 10 mA, I = 0.3 mA) V−− 0.25 VC B CE(sat)V−− 0.2 VOutput Voltage (on) (V = 5.0 V, V = 3.5 V, R = 1.0 kCC B L OLOutput Voltage (off) (V = 5.0 V, V = 0.5 V, R = 1.0 k) V 4.9−− VOHCC B LInput Resistor R1 32.9 47 61.1 kResistor Ratio R1/R2 0.8 1.0 1.23. New resistor combinations. Updated curves to follow in subsequent data sheets.4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%.300250200150100R = 490°C/W50JA0−50 0 50 100 150T , AMBIENT TEMPERATURE (°C)AFigure 1. Derating CurveORDERING INFORMATION AND RESISTOR VALUES†Device R1 (K) R2 (K) Package ShippingNSB4904DW1T1G 47 47 SOT−363 3000/Tape & Reel(Pb−Free)NSB4904DW1T2G 47 47 SOT−363 3000/Tape & Reel(Pb−Free)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecification Brochure, BRD8011/D.
