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NM27C128QE150 from NS, National Semiconductor 6100pcs , DIP28, 131,072-Bit (16K x 8) High Performance CMOS EPROM
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NM27C128QE150 NS N/a 6100
NM27C128QE150 from NSC, National Semiconductor 400pcs , DIP, 131,072-Bit (16K x 8) High Performance CMOS EPROM
Electrical Characteristics Over Operating Range with V = VPP CCSymbol Parameter Test Conditions Min Max UnitsV Input Low Level -0.5 0.8 VILV Input High Level 2.0 V +1 VIH CCV Output Low Voltage I = 2.1 mA 0.4 VOL OLV Output High Voltage I = -2.5 mA 3.5 VOH OHI V Standby Current CE = V ±0.3V 100 μASB1 CC CC(CMOS) V = GND ± 0.3V, V = V ±0.3VIL IH CC2I V Standby Current (T L) CE = V 1mASB2 CC IH2I V Active Current, T L Inputs CE = OE = V , f = 5 MHz 35 mACC1 CC ILI/O = 0 mAI V Supply Current V = V 10 μAPP PP PP CCV V Read Voltage GND V VPP PP CCI Input Load Current V = 5.5V or GND -1 1 μALI INI Output Leakage Current V = 5.5V or GND -10 10 μALO OUTAC NM27C128 131,072-Bit (16K x 8) High Performance CMOS EPROM. . . . . . . . . July 1998NM27C128131,072-Bit (16K x 8) High Performance CMOS EPROMThe NM27C128 is one member of a high density EPROM Family

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