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NLAS3699MN1R2G from ON, ON Semiconductor 283pcs , QFNPB,Dual DPDT Ultra-Low RON Switch
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NLAS3699MN1R2G ON N/a 283
ELECTRICAL CHARACTERISTICS − Analog SectionGuaranteed Maximum Limit−55C to 25C 85C 125CMin Max Min Max Min MaxSymbol Parameter Condition V 10% UnitCCR NC/NO On−Resistance V  V or V  V 2.5 0.6 0.6 0.7 ON IN IL IN IH(Note 2)V = GND to V 3.0 0.5 0.5 0.6IS CCI I  100 mA 4.7 0.5 0.5 0.5INR NC/NO On−Resistance I = 100 mA 2.5 0.15 0.15 0.15 FLAT COMFlatness (Notes 2, 4)V = 0 to V 3.0 0.15 0.15 0.15IS CC4.7 0.15 0.15 0.15R On−Resistance Match V = 1.3 V; 2.5 0.06 0.06 0.06 ON ISBetween Channels I = 100 mACOM(Notes 2 and 3)V = 1.5 V; 3.0 0.05 0.05 0.05ISI = 100 mACOMV = 2.8 V; 4.7 0.05 0.05 0.05ISI = 100 mACOMI NC or NO Off Leakage V = V or V 4.7 −5.0 5.0 −10 10 −100 100 nANC(OFF) IN IL IHCurrent (Note 2)I V or V = 0.8 VNO(OFF) NO NCV = 3.7 VCOMI COM ON V = V or V 4.7 −10 10 −100 100 −1000 1000 nACOM(ON) IN IL IHLeakage CurrentV 0.8 V or 3.7 V withNO(Note 2)V floating orNCV 0.8 V or 3.7 V withNCV floatingNOV = 0.8 V or 3.7 VCOM2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.3. R R − R between NC1 and NC2 or between NO1 and NO2.ON = ON(MAX) ON(MIN)4. Flatness is defined as the difference between the maximum and minimum value of on−resistance as measured over the specified analogsignal ranges.
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