| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| NESB064T-N3E |
NICHIA |
N/a |
2000 |
 |
|
NESG2021M05-T1 ,NPN SiGe high frequency transistor.FEATURES• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum)• LOW NOISE FIG ..
NESG2030M04 ,NONLINEAR MODELFEATURES• SiGe TECHNOLOGY:fT = 60 GHz Process• LOW NOISE FIGURE:NF = 0.9 dBm at 2 GHz• HIGH MAXIMUM ..
NESG2031M05-T1 ,NECs NPN SiGe HIGH FREQUENCY TRAN SIS TORFEATURES• HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum)• LOW NOISE FIG ..
NESG2031M05-T1-A , NPN SiGe RF Transistor for Low Noise, High-Gain Amplification
NESG2031M16 , NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
NL322522T-3R9J , SMD
NL322522T-3R9J , SMD
NL322522T-3R9J , SMD
