| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| NE6828-00024 |
NT |
N/a |
68 |
 |
|
NE68519 ,NONLINEAR MODEL
NE68519-T1 ,SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTORFEATURES• LOW COST• SMALL AND ULTRA SMALL SIZE PACKAGES• LOW VOLTAGE/LOW CURRENT OPERATION• HIGH GA ..
NE68939-T1 ,NPN SILICON EPITAXIAL TRANSISTORapplications. The device is designed to op- 4) Emittererate from a 3.6 V supply, and deliver over ..
NE699M01-T1 ,NPN epitaxial silicon transistor for microwave high-gain amplification.FEATURES OUTLINE DIMENSIONS (Units in mm)PACKAGE OUTLINE M01• HIGH fT:16 GHz TYP at 2 V, 20 mATOP ..
NE70083 ,80 GHz, low noise Ku-K band GaAs MESFETapplications.
2.8 dB at 12 GHz The device is available as a chip (NE21800), and in a rugged
. HIG ..
NL322522T-121J , SMD
NL322522T-121J , SMD
NL322522T-121J , SMD
