| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| NE651N |
|
N/a |
84 |
 |
|
NE651R479A-T1 ,0.4 W L-BAND POWER GaAs HJ-FETapplications for mobilecommunication and wireless PC LAN systems. It is capable of delivering 0.4 ..
NE651R479A-T1 ,0.4 W L-BAND POWER GaAs HJ-FETDATA SHEETN-CHANNEL GaAs HJ-FETNE651R479A0.4 W L-BAND POWER GaAs HJ-FETDESCRIPTIONThe NE651R47 ..
NE663M04-T2 ,NPN silicon high frequency transistor.FEATURES• HIGH GAIN BANDWIDTH: fT = 15 GHz2• HIGH POWER GAIN: IS21EI = 11 dB TYP at 2 GHz• LOW NOIS ..
NE68119-T1 ,NECs NPN SILICON HIGH FREQUENCY TRANSISTORapplications up to 4 GHz. The NE681 die is also18 (SOT 343 STYLE) SUPER MINI MOLD)available in six ..
NE68519 ,NONLINEAR MODEL
NL322522T-121J , SMD
NL322522T-121J , SMD
NL322522T-121J , SMD
