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NE650R479A-T1 |NE650R479AT1NECN/a3000avai0.4 W L, S-BAND POWER GaAs MES FET


NE650R479A-T1 ,0.4 W L, S-BAND POWER GaAs MES FETapplications for mobilecommunication handset and base station systems. It is capable of delivering ..
NE6510179A-A , NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
NE6510179A-T1 ,1 W L-BAND POWER GaAs HJ-FETapplications for mobilecommunication and wireless PC LAN systems. It is capable of delivering 1 W ..
NE651R479A-T1 ,0.4 W L-BAND POWER GaAs HJ-FETapplications for mobilecommunication and wireless PC LAN systems. It is capable of delivering 0.4 ..
NE651R479A-T1 ,0.4 W L-BAND POWER GaAs HJ-FETDATA SHEETN-CHANNEL GaAs HJ-FETNE651R479A0.4 W L-BAND POWER GaAs HJ-FETDESCRIPTIONThe NE651R47 ..
NE663M04-T2 ,NPN silicon high frequency transistor.FEATURES• HIGH GAIN BANDWIDTH: fT = 15 GHz2• HIGH POWER GAIN: IS21EI = 11 dB TYP at 2 GHz• LOW NOIS ..
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NE650R479A-T1

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