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Partno Mfg Dc Qty AvailableDescript
NE649N SIGENT N/a 200
NE649N Sig N/a 3



NE6500379A-T1 ,3W L, S-BAND POWER GaAs MESFETapplications for mobilecommunication handset and base station systems. It is capable of delivering ..
NE6500496 ,4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FETFEATURES4.3 ±0.24.0• Class A operation• High output power: 36 dBm (typ)DRAIN• High gain: 11.5 dB ..
NE6501077 ,10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FETFEATURES2.5 6.35 ±0.4• Class A operation• High output power: 39.5 dBm (typ)R1.25, 2 PLACES• High g ..
NE650R279A-T1 ,0.2 W L, S-BAND POWER GaAs MES FETapplications for mobilecommunication handset and base station systems. It is capable of delivering ..
NE650R479A-T1 ,0.4 W L, S-BAND POWER GaAs MES FETapplications for mobilecommunication handset and base station systems. It is capable of delivering ..
NL322522T-121J , SMD
NL322522T-121J , SMD
NL322522T-121J , SMD
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