NDT410EL ,N-Channel Logic Level Enhancement Mode Field Effect TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDT451AN ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDT451N ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDT451N ,N-Channel Enhancement Mode Field Effect Transistor
NDT452AP ,P-Channel Enhancement Mode Field Effect TransistorFeaturesPower SOT P-Channel enhancement mode power field-5A, -30V. R = 0.065Ω @ V = -10V ..
NDT452P ,P-Channel Enhancement Mode Field Effect Transistorapplications suchas notebook computer power management and DCmotor control._____D DD S SG G Absolut ..
NJU7114AM , C-MOS COMPARATOR WITH OPEN DRAIN OUTPUT
NJU7118F2 , LOW POWER AND LOW OFFSET VOLTAGE SUPER SMALL-SIZED SINGLE C-MOS COMPALATOR
NJU7118F3 , LOW POWER AND LOW OFFSET VOLTAGE SUPER SMALL-SIZED SINGLE C-MOS COMPALATOR
NJU7141F , LOW-VOLTAGE OPERATION TINY SINGLE C-MOS COMPARATOR
NJU7200L33 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NJU7200L50 , SUPER LOW OPERATING CURRENT C-MOS 3-TERMINAL VOLTAGE REGULATOR
NDT410EL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
August 1996
NDT410EL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features________________________________________________________________________________________________
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol Parameter NDT410EL UnitsVDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage 20 VD Drain Current - Continuous (Note 1a) 2.1 A
- Pulsed 10D Maximum Power Dissipation (Note 1a) 3 W
(Note 1b) 1.3
(Note 1c) 1.1J,TSTG Operating and Storage Temperature Range -65 to 150 °C
THERMAL CHARACTERISTICSθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/WθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W
* Order option J23Z for cropped center drain lead.
Power SOT N-Channel logic level enhancement mode
power field effect transistors are produced using
National's proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance,
provide superior switching performance, and
withstand high energy pulses in the avalanche and
commutation modes. These devices are particularly
suited for low voltage applications such as
automotive, DC/DC converters, PWM motor controls,
and other battery powered circuits where fast
switching, low in-line power loss, and resistance to
transients are needed.
2.1A 100V. RDS(ON) = 0.25Ω @ VGS = 5V.
High density cell design for extremely low R DS(ON).
High power and current handling capability in a
widely used surface mount package. SGG
