NDS9959 ,Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description
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NDS9959
Dual N-Channel Enhancement Mode Field Effect Transistor
February 1996 NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect 2.0A, 50V. R = 0.3W @ V = 10V DS(ON) GS transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is High density cell design for extremely low R . DS(ON) especially tailored to minimize on-state resistance, provide High power and current handling capability in a widely used superior switching performance, and withstand high energy surface mount package. pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such Dual MOSFET in surface mount package. as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed. _________________________________________________________________________________ 5 4 3 6 2 7 8 1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDS9959 Units V Drain-Source Voltage 50 V DSS V Gate-Source Voltage ± 20 V GSS I Drain Current - Continuous @ T = 25°C (Note 1a) ± 2.0 A D A - Continuous @ T = 70°C (Note 1a) ± 1.6 A - Pulsed @ T = 25°C ± 8 A P Power Dissipation for Dual Operation 2 W D Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1 (Note 1c) 0.9 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W R JC q © 1997 NDS9959.SAM
