IC Phoenix
 
Home ›  NN9 > NDS8936,Dual N-Channel Enhancement Mode Field Effect Transistor
NDS8936 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
NDS8936NSN/a6976avaiDual N-Channel Enhancement Mode Field Effect Transistor


NDS8936 ,Dual N-Channel Enhancement Mode Field Effect TransistorJuly 1996 N NDS8936Dual N-Channel Enhancement M ode Field Effect Transistor
NDS8947 ,Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8947 ,Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8947 ,Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8958 ,Dual N & P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Type Min T ..
NDS8961 ,Dual N-Channel Enhancement Mode Field Effect TransistorFeatures3.1A, 30V. R = 0.1Ω @ V = 10V SO-8 N-Channel enhancement mode power field ..
NJU6451AF , 80 OUTPUT BIT MAP LCD EXTENSION DRIVER
NJU6452AF , BIT MAP LCD DRIVER 
NJU6467F , 12-CHARACTER 1-LINE DOT MATRIX LCD CONTROLLER DRIVER 
NJU6468FC1 , 8-CHARACTER 2-LINE DOT MATRIX LCD CONTROLLER DRIVER WITH EXTENSION FUNCTION
NJU6535FH1 , 1/3 , 1/4 Duty LCD Driver
NJU6539FG1 , 1/8, 1/9, 1/10 DUTY BITMAP LCD DRIVER WITH KEY SCAN


NDS8936
Dual N-Channel Enhancement Mode Field Effect Transistor
July 1996 NDS8936
Dual N-Channel Enhancement M ode Field Effect Transistor
General Description Features

________________________________________________________________________________
Absolute M aximum Ratings TA= 25°C unless otherwise noted
Symbol Parameter NDS8936 Units
DSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ± 20 VD Drain Current - C ontinuous (Note 1a) ± 5.3 A
- Pulsed ± 20 Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9J,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
θJA Thermal R esistance, Junction-to-Ambient (Note 1a) 78 °C/WθJC Thermal R esistance, Junction-to-Case (Note 1) 40 °C/W
5.3A, 30V. R DS(ON) = 0.035Ω @ VGS = 10V
R DS(ON) = 0.05Ω @ VGS = 4.5V
High density cell design for extremely low R DS(ON).
High power and current handling capability in a
widely used surface mount package.
Dual MOSFET in surface mount package.
These N-Channel enhancement mode power field
effect transistors are produced using National's
proprietary, high cell density, DMOS technology.
This very high density process is especially tailored
to minimize on-state resistance and provide
superior switching performance. These devices are
particularly suited for low voltage applications such
as notebook computer power management and
other battery powered circuits where fast switching,
low in-line power loss, and resistance to transients
are needed.
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED