NDS8928 ,Dual N & P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Type Min T ..
NDS8936 ,Dual N-Channel Enhancement Mode Field Effect TransistorJuly 1996 N NDS8936Dual N-Channel Enhancement M ode Field Effect Transistor
NDS8947 ,Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8947 ,Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8947 ,Dual P-Channel Enhancement Mode Field Effect Transistor
NDS8958 ,Dual N & P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Type Min T ..
NJU6451AF , 80 OUTPUT BIT MAP LCD EXTENSION DRIVER
NJU6452AF , BIT MAP LCD DRIVER
NJU6467F , 12-CHARACTER 1-LINE DOT MATRIX LCD CONTROLLER DRIVER
NJU6468FC1 , 8-CHARACTER 2-LINE DOT MATRIX LCD CONTROLLER DRIVER WITH EXTENSION FUNCTION
NJU6535FH1 , 1/3 , 1/4 Duty LCD Driver
NJU6539FG1 , 1/8, 1/9, 1/10 DUTY BITMAP LCD DRIVER WITH KEY SCAN
NDS8928
Dual N & P-Channel Enhancement Mode Field Effect Transistor
July 1996
NDS8928
Dual N & P-Channel Enhancement M ode Field Effect Transistor
General Description Features ________________________________________________________________________________
Absolute Maximum Ratings
TA= 25°C unless otherwise noted
Symbol Parameter N-Channel P-Channel UnitsDSS Drain-Source Voltage 20 -20 V
VGSS Gate-Source Voltage 8 -8 VD Drain Current - Continuous (Note 1a) 5.5 -3.8 A
- P ulsed 20 -15D Power Dissipation for Dual Operation 2 W
Power Dissipation for Single Operation (Note 1a) 1.6
(Note 1b) 1
(Note 1c) 0.9J,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICSθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/WθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
These dual N- and P -Channel enhancement mode
power field effect transistors are produced using
National's proprietary, high cell density, DMOS
technology. This very high density process is
especially tailored to minimize on-state resistance
and provide superior switching performance. These
devices are particularly suited for low voltage
applications such as notebook computer power
management and other battery powered circuits
where fast switching, low in-line power loss, and
resistance to transients are needed.
N-Channel 5.5A, 20V, RDS(ON)=0.035Ω @ VGS=4.5V
RDS(ON)=0.045Ω @ VGS=2.7V
P-Channel -3.8A, -20V, R DS(ON) =0.07Ω @ VGS =-4.5V
R DS(ON) =0.1Ω @ VGS =-2.7V.
High density cell design for extremely low R DS(ON).
High power and current handling capability in a
widely used surface mount package.
Dual (N & P-Channel) MOSFET in surface mount
package.
