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NDS8435FAIN/a5avaiSingle P-Channel Enhancement Mode Field Effect Transistor


NDS8435 ,Single P-Channel Enhancement Mode Field Effect TransistorMay 1996 NDS8435Single P-Channel Enhancement Mode Field Effect Transistor
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NDS8435
Single P-Channel Enhancement Mode Field Effect Transistor
May 1996 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 P-Channel enhancement mode power field effect -7A, -30V. R = 0.028W @ V = -10V DS(ON) GS R = 0.045W @ V = -4.5V. transistors are produced using Fairchild's proprietary, DS(ON) GS high cell density, DMOS technology. This very high High density cell design for extremely low R DS(ON). density process is especially tailored to minimize on-state High power and current handling capability in a widely used resistance and provide superior switching performance. surface mount package. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ___________________________________________________________________________________________ 5 4 3 6 7 2 8 1 Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDS8435 Units V Drain-Source Voltage -30 V DSS V Gate-Source Voltage -20 V GSS I Drain Current - Continuous (Note 1a) -7 A D - Pulsed -25 Maximum Power Dissipation (Note 1a) 2.5 W P D (Note 1b) 1.2 (Note 1c) 1 Operating and Storage Temperature Range -55 to 150 °C T ,T J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W R JC q © 1997 NDS8435 Rev. B2
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