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NDS7002FAIRCHILN/a6000avaiN-Channel Enhancement Mode Field Effect Transistor
NDS7002FAIRCHILDN/a30000avaiN-Channel Enhancement Mode Field Effect Transistor


NDS7002 ,N-Channel Enhancement Mode Field Effect Transistorapplications.______________________________________________________________________________________ ..
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NDS7002
N-Channel Enhancement Mode Field Effect Transistor
November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low R . These N-Channel enhancement mode field effect transistors DS(ON) are produced using Fairchild's proprietary, high cell density, Voltage controlled small signal switch. DMOS technology. These products have been designed to Rugged and reliable. minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most High saturation current capability. applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. ___________________________________________________________________________________________ D G D G S TO-92 S Absolute Maximum Ratings T = 25°C unless otherwise noted A 2N7000 2N7002 NDS7002A Symbol Parameter Units V Drain-Source Voltage 60 V DSS 60 V V DGR Drain-Gate Voltage (R < 1 MW) GS V Gate-Source Voltage - Continuous V GSS ±20 - Non Repetitive (tp < 50µs) ±40 I Maximum Drain Current - Continuous 200 115 280 mA D - Pulsed 500 800 1500 P Maximum Power Dissipation 400 200 300 mW D o Derated above 25 C 3.2 1.6 2.4 mW/°C T ,T Operating and Storage Temperature Range -55 to 150 -65 to 150 °C J STG T Maximum Lead Temperature for Soldering 300 °C L Purposes, 1/16" from Case for 10 Seconds THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient 312.5 625 417 °C/W R JA q © 1997 2N7000.SAM Rev. A1
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