NDS355AN_NL ,N-Channel Logic Level Enhancement Mode Field Effect Transistorapplications in notebook computers, portable phones, PCMCIA thermal and electrical capabilities.car ..
NDS355AN_NL ,N-Channel Logic Level Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDS355N ,N-Channel Logic Level Enhancement Mode Field Effect TransistorFeaturesThese N-Channel logic level enhancement mode power field 1.6A, 30V. R = 0.125Ω @ V = 4.5 ..
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NDS355AN_NL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features TM SuperSOT -3 N-Channel logic level enhancement mode 1.7A, 30 V, R = 0.125 W @ V = 4.5 V DS(ON) GS power field effect transistors are produced using Fairchild's R = 0.085 W @ V = 10 V. DS(ON) GS proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state Industry standard outline SOT-23 surface mount package TM resistance. These devices are particularly suited for low voltage using proprietary SuperSOT -3 design for superior applications in notebook computers, portable phones, PCMCIA thermal and electrical capabilities. cards, and other battery powered circuits where fast High density cell design for extremely low R . DS(ON) switching, and low in-line power loss are needed in a very small outline surface mount package. Exceptional on-resistance and maximum DC current capability. Compact industry standard SOT-23 surface mount package. _______________________________________________________________________________ D G S Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDS355AN Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage - Continuous ±20 V GSS I Maximum Drain Current - Continuous (Note 1a) 1.7 A D - Pulsed 10 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 T ,T Operating and Storage Temperature Range -55 to 150 °C J STG THERMAL CHARACTERISTICS R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W qJA R Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W qJC © 1997 NDS355AN Rev.C
