NDP7050 ,N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionEnhancement Mode Field Effect Transistor / NDB7050NDP7050 (TCW VDI AV µ A VI V V ..
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NDP7060 ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)CSymbol Parameter Conditions Min Typ Ma ..
NDP7060 ,N-Channel Enhancement Mode Field Effect Transistorapplications. ________________________________________________________________________________DGS A ..
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NDP7050
N-Channel Enhancement Mode Field Effect Transistor
March 1996 N-Channel Features These N-Channel enhancement mode power field effect 75A, 50V. R = 0.013 W @ V. ) transistors are produced using Fairchild's proprietary, high Critical DC electrical parameters specified at elevated cell density, DMOS technology. This very high density temperature. process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC175°C maximum junction temperature rating. converters, PWM motor controls, and other battery powered High density cell design. circuits where fast switching, low in-line power loss, and 2resistance to transients are needed. PAK) package for both through hole and surface mount applications. D G S TC VV VV
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