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NDH8302P
P-Channel Enhancement Mode Field Effect Transistors
May 1996
ADVANCE INFORMATION
NDH8302P
Dual P-Channel Enhancement M ode Field Effect Transistor
General Description Features______________________________________________________________________________________________
Absolute M aximum Ratings TA = 25°C unless otherwise noted
Symbol Parameter NDH8302P UnitsDSS Drain-Source Voltage -20 V
VGSS Gate-Source Voltage - Continuous -8 V Drain Current - Continuous (Note 1) -2 A
- Pulsed -6 Maximum Power Dissipation (Note 1) 0.9 W
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICSθJA Thermal Resistance, Junction-to-Ambient (Note 1) 135 °C/WθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W
-2A, -20V. R DS(ON) = 0.14Ω @ VGS = -4.5V
R DS(ON) = 0.2Ω @ VGS = -2.7V.
Proprietary SuperSOTTM -8 package design using
copper lead frame for superior thermal and
electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC
current capability.
These P-Channel enhancement mode power field
effect transistors are produced using Nationals
proprietary, high cell density, DMOS technology.
This very high density process is especially tailored
to minimize on-state resistance. These devices are
particularly suited for low voltage applications such
as notebook computer power management and
other battery powered circuits where fast high-side
switching, and low in-line power loss are needed in
a very small outline surface mount package.
SuperSOTTM-8
