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NDF10N60ZONN/a10000avaiPower MOSFET, N-Channel, 600 V, 0.75 Ω


NDF10N60Z ,Power MOSFET, N-Channel, 600 V, 0.75 ΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF10N60ZH , N-Channel Power MOSFET 600 V, 0.75 Ohm
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NDF10N60Z
Power MOSFET, N-Channel, 600 V, 0.75 Ω
NDF10N60Z
N-Channel Power MOSFET
600 V , 0.75 
Features Low ON Resistance Low Gate Charge ESD DiodeïProtected Gate 100% Avalanche Tested 100% Rg Tested These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol NDF Unit
DrainïtoïSource Voltage VDSS 600 V
Continuous Drain Current, RJC (Note 1) ID 10 A
Continuous Drain Current
TA = 100°C, RJC (Note 1) 6.0 A
Pulsed Drain Current,
tP = 10 s
IDM 40 A
Power Dissipation, RJC PD 39 W
GateïtoïSource Voltage VGS ±30 V
Single Pulse Avalanche Energy
(L = 6.0 mH, ID = 10 A)
EAS 300 mJ
ESD (HBM) (JESD22ïA114) Vesd 3900 V
RMS Isolation Voltage
(t = 0.3 sec., R.H.  30%,
TA = 25°C) (Figure 13)
VISO 4500 V
Peak Diode Recovery (Note 2) dV/dt 4.5 V/ns
MOSFET dV/dt dV/dt 60 V/ns
Continuous Source Current (Body Diode) IS 10 A
Maximum Temperature for
Soldering Leads 260 °C
Operating Junction and
Storage T emperature Range
TJ, Tstg ï55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. Limited by maximum junction temperature.IS  10 A, di/dt  200 A/s, VDD = 80% BVDSS
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VDSS (@ TJmax) RDS(ON) (MAX) @ 5 A
650 V 0.75
NïChannel
G (1)
D (2)
S (3)
NDF10N60ZG
TOï220FP
CASE 221D
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
ORDERING AND MARKING INFORMATION23
NDF10N60ZH
TOï220FP
CASE 221AH23
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