NDF08N60Z ,Power MOSFET 600V 0.95 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF08N60ZG , N-Channel Power MOSFET 600 V, 0.95 Ω
NDF10N60Z ,Power MOSFET, N-Channel, 600 V, 0.75 ΩELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF10N60ZH , N-Channel Power MOSFET 600 V, 0.75 Ohm
NDF10N62Z ,Power MOSFET 620V 0.750 Ohm Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Test Conditions Symbol ..
NDF10N62ZG , N-Channel Power MOSFET 620 V, 0.65 Ω
NJM79M09A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJM79M12A , 3-TERMINAL NEGATIVE VOLTAGE REGULATOR
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMDAC-08MC , 8-BIT HIGH SPEED MULTIPLYING D/A CONVERTER
NJMOP-07D , ULTRA-LOW OFFSET VOLTAGE, LOW DRIFT OPERATIONAL AMPLIFIER
NJSW036AT , TYPE WHITE LED
NDF08N60Z
Power MOSFET 600V 0.95 Ohm Single N-Channel
NDF08N60Z
N-Channel Power MOSFET
600 V , 0.95
Features Low ON Resistance Low Gate Charge ESD DiodeïProtected Gate 100% Avalanche Tested These Devices are PbïFree, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol NDF08N60Z Unit
DrainïtoïSource Voltage VDSS 600 V
Continuous Drain Current RJC (Note 1) ID 8.4 A
Continuous Drain Current RJC
TA = 100°C (Note 1) 5.3 A
Pulsed Drain Current,
VGS @ 10 V
IDM 30 A
Power Dissipation PD 36 W
GateïtoïSource Voltage VGS 30 V
Single Pulse Avalanche Energy,
ID = 7.5 A
EAS 235 mJ
ESD (HBM)
(JESD 22ïA114)
Vesd 4000 V
RMS Isolation Voltage
(t = 0.3 sec., R.H. 30%,
TA = 25°C) (Figure 14)
VISO 4500 V
Peak Diode Recovery (Note 2) dv/dt 4.5 V/ns
Continuous Source Current (Body Diode) IS 7.5 A
Maximum Temperature for Soldering
Leads 260 °C
Operating Junction and
Storage T emperature Range
TJ, Tstg ï55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability. Limited by maximum junction temperatureID 7.5 A, di/dt 200 A/s, VDD BVDSS, TJ 150°C.
NïChannel
MARKING
DIAGRAM
http://
VDSS RDS(ON) (MAX) @ 3.5 A
600 V 0.95
NDF08N60ZG
NDF08N60ZH
AYWW
Gate Source
Drain
NDF08N60ZG
TOï220FP
CASE 221D
G (1)
D (2)
S (3)
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
NDF08N60ZH
TOï220FP
CASE 221AH = Location Code = Year = Work Week
G, H = PbïFree, HalogenïFree Package
