| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| NAND512W3A2CN6E ST |
ST|ST Microelectronics |
N/a |
576 |
 |
|
NAND512W3A2CZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512W3A2CZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND512W3A2CZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAT9914BPL , IEEE 488.2 Controller Chip
NB100ELt23LDR2 ,3.3V Dual Differential LVPECL to LVTTL Translator2NB100ELT23LTable 4. PECL DC CHARACTERISTICS V = 3.3 V, GND = 0 V (Note 2)CC−40°C 25°C 85°CMin Typ ..
NJM13700M , DUAL OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
NJM1372AD , TV VIDEO MODULATOR
NJM1431AF , ADJUSTABLE HIGH PRECISION SHUNT REGULATOR
