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NAND512W3A0AN6 from ST, ST Microelectronics 96pcs , TSOP48,128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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NAND512W3A0AN6 ST N/a 96
Block Diagrams . . . . . . 24Page Program 25Figure 17.Page Program Operation 25Copy Back Program . . . 26Table 10. Copy Back Program Addresses . . . . 26Figure 18.Copy Back Operation . . . 26Block Erase . . 27Figure 19.Block Erase Operation . . 27Reset 27Read Status Register . . 28Write Protection Bit (SR7) 28P/E/R Controller Bit (SR6) 28Error Bit (SR0) . 28SR5, SR4, SR3, SR2 and SR1 are Reserved . 28Table 11. Status Register Bits . . . . . 29Read Electronic Signature . . . . . . 29Table 12. Electronic Signature . . . . . 29SOFTWARE ALGORITHMS . 30Bad Block Management 30Block Replacement . . . . 30Table 13. Block Failure . . 30Figure 20.Bad Block Management Flowchart . 30Figure 21.Garbage Collection . . . . . 31Garbage Collection . . . . 31Wear-leveling Algorithm 31Error Correction Code . . 31Figure 22.Error Detection 31Hardware Simulation Models . . . .324/57NAND128-A, NAND256-A, NAND512-A, NAND01G-ABehavioral simulation models . . . . . 32IBIS simulations models . 32PROGRAM AND ERASE TIMES AND ENDURANCE CYCLES . . . . . 33Table 14. Program, Erase Times and Program Erase Endurance Cycles . . . 33MAXIMUM RATING 33Table 15.

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