| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| N0429NQ |
NEC|NEC |
N/a |
30000 |
 |
|
N0434N , N-CHANNEL MOSFET FOR SWITCHING
N04L163WC1AT-70I , 4Mb Ultra-Low Power Asynchronous CMOS SRAM
N0600N , MOS FIELD EFFECT TRANSISTOR
N0601N , N-CHANNEL MOSFET FOR SWITCHING
N0602N , N-CHANNEL MOSFET FOR SWITCHING
NE5511279A-T1 ,NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)SYMBOL PARAMETER MIN TYP MAX UNIT TEST CONDITIONSPout Output ..
NE5511279A-T1-A ,NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FETFEATURES• HIGH OUTPUT POWER: PACKAGE OUTLINE 79A Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 ..
NE5512 ,Dual high-performance operational amplifier
