| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| N0423NQ-ZP |
NEC|NEC |
N/a |
30000 |
 |
|
N0434N , N-CHANNEL MOSFET FOR SWITCHING
N04L163WC1AT-70I , 4Mb Ultra-Low Power Asynchronous CMOS SRAM
N0600N , MOS FIELD EFFECT TRANSISTOR
N0601N , N-CHANNEL MOSFET FOR SWITCHING
N0602N , N-CHANNEL MOSFET FOR SWITCHING
NE5500179A-T1 ,SILICON POWER MOS FETFEATURES• High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = ..
NE5510279A-T1 ,3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers.FEATURES OUTLINE DIMENSIONS (Units in mm)• HIGH OUTPUT POWER:PACKAGE OUTLINE 79A32 dBm TYP at VDS = ..
NE5511279A-T1 ,NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)SYMBOL PARAMETER MIN TYP MAX UNIT TEST CONDITIONSPout Output ..
