| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| N0400P |
RENESAS |
N/a |
5000 |
 |
MOS FIELD EFFECT TRANSISTOR |
| N0400P |
NEC|NEC |
N/a |
30000 |
|
MOS FIELD EFFECT TRANSISTOR |
N0400P-E1-AY NEC
N0408NQ-S18-AY RENESAS
N0400P , MOS FIELD EFFECT TRANSISTOR
N0412N , N-CHANNEL MOSFET FOR SWITCHING
N0413N , N-CHANNEL MOSFET FOR SWITCHING
N0434N , N-CHANNEL MOSFET FOR SWITCHING
N04L163WC1AT-70I , 4Mb Ultra-Low Power Asynchronous CMOS SRAM
NE538N ,High Slew Rate Op Amp
NE5500179A-T1 ,SILICON POWER MOS FETDATA SHEETSILICON POWER MOS FETNE5500179A4.8 V OPERATION SILICON RF POWER LD-MOS FETFOR 1.9 ..
NE5500179A-T1 ,SILICON POWER MOS FETFEATURES• High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = ..
