| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| N0100P |
NEC|NEC |
N/a |
30000 |
 |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
N010-4884-V402
N012 CMD
N012+ CMD
N0151QA PHILIS
N0156349
N0165
N0195C NEC
N01A NATIONAL
N01A NS
N01A
N01B NS
N01L083WC2AN2-55I SOLUTIONS
N01L083WC2AN2-55I SLUTIONS
N01L083WC2AN2-55I AMIS
N01L083WC2AN-55I SOIUTION
N01L083WC2AN-55I SOUTION
N01L083WC2AT2-55I041AC N/A
N01L083WC2AT-55I NANOAMP
N01L083WC2CN1-55IL CY
N01L083WC2T1-55IL NANOAMP
N0100P , P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
N01L163WC2AT2-55I , 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit
N01L163WC2AT2-55I , 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit
N01L163WC2AT2-55I , 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 16 bit
N01L83W2AN25I , 1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit
NE5234N ,Matched quad high-performance low-voltage operational amplifier
NE52418-T1 ,L to S band low noise amplifier NPN GaAs HBT.applications. The NE52418 is housed in a 4-pin supermini-mold package, making it ideal for high-den ..
NE52418-T1 ,L to S band low noise amplifier NPN GaAs HBT.FEATURES PACKAGE DIMENSIONS (Units in mm)• HIGH POWER GAIN:PACKAGE OUTLINE 18GA = 16 dB TYP , MSG = ..
