MW4IC915MBR1 ,GSM/GSM EDGE, N–CDMA, W–CDMA 860–960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Amplifier Freescale Semiconductor, Inc.Order this documentSEMICONDUCTOR TECHNICAL DATAby MW4IC91 ..
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MW4IC915MBR1
RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
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The MW4IC915MB/GMB wideband integrated circuit is designed for GSM
and GSM EDGE base station applications. It uses Motorolas newest High
Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage
structure. Its wideband On Chip design makes it usable from 750 to 1000 MHz.
The linearity performances cover all modulations for cellular applications: GSM,
GSM EDGE, TDMA, N-CDMA and W-CDMA. Typical GSM/GSM EDGE Performances: 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, 869-894 MHz and 921-960 MHzOutput Power 3 Watts Avg.Power Gain 31 dBEfficiency 19% Spectral Regrowth @ 400 kHz Offset = -65 dBcSpectral Regrowth @ 600 kHz Offset = -83 dBcEVM 1.5% Typical Performance: 860-960 MHz, 26 VoltsOutput Power 15 Watts CWPower Gain 30 dBEfficiency 44% On Chip Matching (50 Ohm Input, >3 Ohm Output) Integrated Temperature Compensation Capability with Enable/DisableFunction Integrated ESD Protection Capable of Handling 5:1 VSWR, @ 26 Vdc, f = 921 MHz, Pout = 15 W CW, IDQ1 = 90 mA, IDQ2 = 240 mA Can Be Bolted or Soldered through a Hole in the Circuit Board for Maximum Thermal Performance Also Available in Gull Wing for Surface Mount In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
