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MTW20N50E Fast Delivery,Good Price
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MTW20N50EONN/a9avaiOBSOLETE


MTW20N50E ,OBSOLETEhttp://onsemi.com3, DRAIN-TO-SOURCE RESISTANCERR , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURR ..
MTW26N15E ,TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTW35N15E ,TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTW45N10E ,TMOS POWER FET 45 AMPERES 100 VOLTS RDS(on) = 0.035 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTW7N80E ,TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM
MTW8N60E ,TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
NB2305AI1DR2G , 3.3 V Zero Delay Clock Buffer
NB2305AI1DR2G , 3.3 V Zero Delay Clock Buffer
NB2305AI1HDR2G , 3.3 V Zero Delay Clock Buffer
NB2579ASNR2 , Low Power, Reduced EMI Clock Synthesizer
NB2669ASNR2 , Low Power, Reduced EMI Clock Synthesizer
NB2762ASNR2 , Low Power, Reduced EMI Clock Synthesizer


MTW20N50E
OBSOLETE
MTW20N50E
Preferred Device

Power MOSFET
20 Amps, 500 Volts
N–Channel TO–247

This high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage–blocking capability without degrading
performance over time. In addition, this advanced Power MOSFET is
designed to withstand high energy in the avalanche and commutation
modes. The new energy efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for high voltage, high speed
switching applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are critical
and offer additional safety margin against unexpected voltage
transients. Robust High Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
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