MTV32N20E ,TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTV32N25E ,N-Channel Enhancement-Mode Silicon GateELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTW14N50E ,OBSOLETE
MTW16N40E ,TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTW20N50E ,OBSOLETEhttp://onsemi.com3, DRAIN-TO-SOURCE RESISTANCERR , DRAIN-TO-SOURCE RESISTANCE (OHMS) I , DRAIN CURR ..
MTW26N15E ,TMOS POWER FET 26 AMPERES 150 VOLTS RDS(on) = 0.095 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NB100ELt23LDR2 ,3.3V Dual Differential LVPECL to LVTTL Translator2NB100ELT23LTable 4. PECL DC CHARACTERISTICS V = 3.3 V, GND = 0 V (Note 2)CC−40°C 25°C 85°CMin Typ ..
NB100EP223 ,3.3V 1:22 Differential HSTL/PECL to HSTL Clock Driver with LVTTL Clock Select and Output Enable3AN1672/DSection 2: Translation from Different ECL Operating Mode Drivers to Non ECL ReceiversThe f ..
NB100EP223FA ,3.3V 1:22 Differential HSTL/PECL to HSTL Clock Driver with LVTTL Clock Select and Output Enable3AND8090/DAC Test BoardsAn example of an AC characteristic test board is shown inEach test device i ..
NB100EP223FAG , 3.3V1:22 Differential HSTL/PECL to HSTL Clock Driver with LVTTL Clock Select and Output Enable
NB100LVEP221FARG , 2.5V/3.3V 1:20 Differential HSTL/ECL/PECL Clock Driver
NB100LVEP222 ,2.5V/3.3V 1:15 Differential ECL/PECL w1/w2 Clock DriverPrepared byCleon PettyAPPLICATION NOTETodd PearsonECL Applications EngineeringThis application note ..
MTV32N20E
TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
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N–Channel Enhancement–Mode Silicon GateThis high voltage MOSFET uses an advanced termination
scheme to provide enhanced voltage–blocking capability without
degrading performance over time. In addition, this advanced TMOS
E–FET is designed to withstand high energy in the avalanche and
commutation modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for high
speed switching applications in power supplies, converters, PWM
motor controls, these devices are particularly well suited for bridge
circuits where diode speed and commutating safe operating areas
are critical and offer additional safety margin against unexpected
voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)(1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Thermal Clad is a trademark of the Bergquist Company.
N–Channel
