Partno |
Mfg |
Dc |
Qty |
Available | Descript |
MTR-B/1-0 |
|
N/a |
24 |
|
|
MTR-B/1-0 |
ALCATEL |
N/a |
96 |
|
|
MTS2916A , Highly Integrated 3-Phase BLDC Sinusoidal Sensorless
MTSF1P02HD ,SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
MTSF1P02HD ,SINGLE TMOS POWER FET 1.8 AMPERES 20 VOLTS RDS(on) = 0.16 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 4)CCharacteristic Symbol Min Typ ..
MTSF2P02HD ,SINGLE TMOS POWER FET 3.0 AMPERES 20 VOLTS RDS(on) = 0.090 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Note 2.)CCharacteristic Symbol Min Ty ..
MTSF3N02HD ,Power MOSFET 3 Amps, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NAND256W3A2AZA6 ,128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash MemoriesBlock Diagram . . . . . 9Figure 4. TSOP48 and WSOP48 Connections, x8 devices . . . . . . 1 ..
NAND256W3A2BZA6 , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256W3A2BZA6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories