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MTP75N05HDMOTON/a18avaiTMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS
MTP75N05HDMOTN/a202avaiTMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS
MTP75N05HDONN/a120avaiTMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS


MTP75N05HD ,TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP75N05HD ,TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTSMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 50 ..
MTP75N06HD ,TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP7N18 ,N-Channel Power MOSFETs, 7A, 150-200Vapplications, ts) l such as switching power supplies, converters, AC and DC motor controls, relay ..
MTP7N20 ,N-Channel Power MOSFETs, 7A, 150-200VElectrical Characteristics (T C: 25°C unless otherwise noted) Symbol Characteristic Min Max Unit ..
MTP8N50E ,TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS(on) = 0.8 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Min Typ Max Unit ..
NAND16GW3C4BN6E , 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories


MTP75N05HD
TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS
 --  -N–Channel Enhancement–Mode Silicon Gate
This advanced high–cell density HDTMOS E–FET is designed to
withstand high energy in the avalanche and commutation modes.
This new energy–efficient design also offers a drain–to–source
diode with a fast recovery time. Designed for low–voltage,
high–speed switching applications in power supplies, converters
and PWM motor controls, and other inductive loads. The avalanche
energy capability is specified to eliminate the guesswork in designs
where inductive loads are switched, and to offer additional safety
margin against unexpected voltage transients. Ultra Low RDS(on), High–Cell Density, HDTMOS SPICE Parameters Available Diode is Characterized for Use in Bridge Circuits Diode Exhibits High Speed, Yet Soft Recovery IDSS and VDS(on) Specified at Elevated Temperature Avalanche Energy Specified
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions—
The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
Designer’s, E–FET and HDTMOS are trademarks of Motorola Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.

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