| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MTP6N60#T |
|
N/a |
11 |
 |
|
MTP6N60E ,TMOS POWER FET 6.0 AMPERES 600 VOLTS RDS(on) = 1.2 OHMSMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–to–Source Voltage V ..
MTP6P20E ,TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 1.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP6P20E ,TMOS POWER FET 6.0 AMPERES 200 VOLTS RDS(on) = 1.0 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 20 ..
MTP75N05HD ,TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTS3, DRAIN-TO-SOURCE RESISTANCE I , DRAIN CURRENT (AMPS)R R , DRAIN-TO-SOURCE RESISTANCE (OHMS)DS(on) ..
MTP75N05HD ,TMOS POWER FET 75 AMPERES RDS(on) = 9.5 mW 50 VOLTSELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NAND16GW3C4BN6E , 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
