MTP60N06 ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTP60N06HD/D* * ** * Motorola Preferred Dev ..
MTP60N06 ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTP60N06HD ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM3R , DRAIN−TO−SOURCE RESISTANCE (OHMS), DRAIN−TO−SOURCE RESISTANCE DS(on)RDS(on)I , DRAIN CURRENT ( ..
MTP60N06HD ,TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP6N60 ,Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220MTP6N60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP6N60 600 V < 1.2 Ω ..
MTP6N60 ,Trans MOSFET N-CH 600V 6.8A 3-Pin(3+Tab) TO-220MTP6N60N - CHANNEL ENHANCEMENT MODEPOWER MOS TRANSISTORTYPE V R IDSS DS(on) DMTP6N60 600 V < 1.2 Ω ..
NAND16GW3C4BN6E , 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZA6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
NAND256R3A2BZB6F , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
MTP60N06-MTP60N06HD
TMOS POWER FET 60 AMPERES 60 VOLTS RDS(on) = 0.014 OHM
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N–Channel Enhancement–Mode Silicon GateThis advanced high–cell density HDTMOS power FET is
designed to withstand high energy in the avalanche and commuta-
tion modes. The new energy efficient design also offers a
drain–to–source diode with a fast recovery time. Designed for low
voltage, high speed switching applications in power supplies,
converters and PWM motor controls, these devices are particularly
well suited for bridge circuits where diode speed and commutating
safe operating areas are critical and offer additional safety margin
against unexpected voltage transients. Avalanche Energy Specified Source–to–Drain Diode Recovery Time Comparable to a Dis-
crete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Designer’s Data for “Worst Case” Conditions— The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves— representing boundaries on device characteristics— are given to facilitate “worst case” design.
E–FET, Designer’s and HDTMOS are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
