Partno |
Mfg |
Dc |
Qty |
Available | Descript |
MTP50N06#T |
|
N/a |
39 |
|
|
MTP50N06EL ,TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP50N06V ,TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTP50N06VL ,Power MOSFET 42 Amps, 60 Volts, Logic Level
MTP5N20 ,POWER FIELD EFFECT TRANSISTORELECTRICAL CHARACTERISTICS (TC = 25°C unless otherWIse noted)Characteristic Symbol Min Max UnitOFF ..
MTP5N40E ,TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NAND08GAH0AZA5E , 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard™ interface
NAND16GW3C4BN6E , 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
NAND256R3A2BZA6E , 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories