| Partno |
Mfg |
Dc |
Qty |
Available | Descript |
| MTP50N05EW |
MOT|Motorola |
N/a |
95 |
 |
|
MTP50N06 ,TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM**Order this documentSEMICONDUCTOR TECHNICAL DATAby MTP50N06V/D* * *** *Motorola Preferred Devic ..
MTP50N06 ,TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP50N06EL ,TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHMELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
MTP50N06V ,TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028 OHMMAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitDrain–Source Voltage V 60 ..
MTP50N06VL ,Power MOSFET 42 Amps, 60 Volts, Logic Level
NAND04GW3B2BN6E , 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
NAND08GAH0AZA5E , 1 Gbyte, 2 Gbyte, 1.8 V/3 V supply, NAND Flash memories with MultiMediaCard™ interface
NAND16GW3C4BN6E , 8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
